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CY14B101Q3 Hoja de datos - Cypress Semiconductor

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Número de pieza
CY14B101Q3

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27 Pages

File Size
1 MB

Fabricante
Cypress
Cypress Semiconductor Cypress

Functional Overview
The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory.


FEATUREs
■ 1-Mbit nonvolatile static random access memory (nvSRAM)
  ❐ Internally organized as 128 K × 8
  ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using HSB pin (Hardware STORE) or SPI instruction (Software STORE)
  ❐ RECALL to SRAM initiated on power-up (Power-Up RECALL) or by SPI instruction (Software RECALL)
  ❐ Automatic STORE on power-down with a small capacitor (except for CY14B101Q1)
■ High reliability
  ❐ Infinite read, write, and RECALL cycles
  ❐ 1 million STORE cycles to QuantumTrap
  ❐ Data retention: 20 years
■ High speed serial peripheral interface (SPI)
  ❐ 40 MHz clock rate
  ❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
■ Write protection
  ❐ Hardware protection using Write Protect (WP) pin
  ❐ Software protection using Write Disable instruction
  ❐ Software block protection for 1/4,1/2, or entire array
■ Low power consumption
  ❐ Single 3 V +20%, –10% operation
  ❐ Average active current of 10 mA at 40 MHz operation
■ Industry standard configurations
  ❐ Industrial temperature
  ❐ CY14B101Q1 has identical pin configuration to industry standard 8-pin NV memory
  ❐ 8-pin dual flat no-lead (DFN) package and 16-pin small outline integrated circuit (SOIC) package
  ❐ Restriction of hazardous substances (RoHS) compliant

 

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