General Description
The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64 K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.
See the Truth Table in this data sheet for a complete description of read and write modes.
The CY7C194BN is available in 24-pin DIP, 24-pin SOJ package(s).

FEATUREs
■ Fast access time: 15 ns
■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power
■ Transistor transistor logic (TTL) compatible inputs and outputs
■ CY7C194BN is available in 24-pin DIP, 24-pin SOJ packages.