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D08S60C(2006) Hoja de datos - Infineon Technologies

IDT08S60C image

Número de pieza
D08S60C

Other PDF
  lastest PDF  

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page
7 Pages

File Size
227.5 kB

Fabricante
Infineon
Infineon Technologies Infineon

Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)

thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives


Número de pieza
componentes Descripción
PDF
Fabricante
2nd generation thinQ!™ SiC Schottky Diode
Ver
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Ver
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Ver
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Ver
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Ver
Infineon Technologies
2nd Generation thinQ!® SiC Schottky Diode
Ver
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Ver
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Ver
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2009 )
Ver
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Ver
Infineon Technologies

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