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D1142 Hoja de datos - Inchange Semiconductor

2SD1142 image

Número de pieza
D1142

componentes Descripción

Other PDF
  no available.

PDF
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page
2 Pages

File Size
238.9 kB

Fabricante
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• High Breakdown Voltage-
   : VCBO= 1500V (Min)
• Collector-Emitter Saturation Voltage-
   : VCE(sat)= 4.0V(Max.)@ IC= 2.5A
• Built-in Damper Diode
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for horizontal deflection output applications.


Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
Inchange Semiconductor

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