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D1409A(2009) Hoja de datos - Toshiba

2SD1409A image

Número de pieza
D1409A

componentes Descripción
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

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page
5 Pages

File Size
143.8 kB

Fabricante
Toshiba
Toshiba Toshiba

High Voltage Switching Applications

• High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A)
• Monolithic construction with built-in base-emitter shunt resistor




Número de pieza
componentes Descripción
PDF
Fabricante
2SD1410A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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2SD2129
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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2SD2131
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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2SD1314
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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2SD2129
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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2SD1415AF
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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2SD2131
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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2SD1525
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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2SD2131
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)
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Unspecified
2SD1415A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1999 )
Ver
Toshiba

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