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D1414 Hoja de datos - Inchange Semiconductor

2SD1414 image

Número de pieza
D1414

Other PDF
  V2  

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page
2 Pages

File Size
189.7 kB

Fabricante
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 80V(Min)
• Collector-Emitter Saturation Voltage-
   : VCE(sat)= 1.5V(Max) @IC= 3A
• High DC Current Gain
   : hFE= 2000(Min) @ IC= 1A, VCE= 2V
• Complement to Type 2SB1024
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Switching applications
• Hammer driver,pulse motor driver applications
• Power amplifier applications.


Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Ver
Unspecified
Silicon NPN Darlington Power Transistor
Ver
Shenzhen SPTECH Microelectronics Co., Ltd.

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