D1601 Hoja de datos - Inchange Semiconductor
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D1601
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
• High DC Current Gain : hFE= 1000(Min) @IC= 2A
• Complement to Type 2SB1101
APPLICATIONS
• Designed for low frequency power amplifiers applications.
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