D1609 Hoja de datos - Inchange Semiconductor
Número de pieza
D1609
componentes Descripción
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PDF
page
2 Pages
File Size
236.1 kB
Fabricante
Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
• Good Linearity of hFE
• 100% avalanche tested
• Complement to Type 2SB1109
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low frequency and high-voltage amplifier
applications.
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