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D1950 Hoja de datos - NEC => Renesas Technology

2SD1950-T1 image

Número de pieza
D1950

Other PDF
  no available.

PDF
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page
4 Pages

File Size
251 kB

Fabricante
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain.
This is suitable for all kind of driving or muting.


FEATURES
● High DC Current Gain and Good hFE linearity.
   hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A)
● Low Collector Saturation Voltage.
   VCE(sat) = 0.18 V TYP. (IC = 1.0 A, IB = 10 mA)
● High VEBO : VEBO = 15 15V


Número de pieza
componentes Descripción
PDF
Fabricante
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Ver
Renesas Electronics

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