D2206(2006) Hoja de datos - Toshiba
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D2206
componentes Descripción
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4 Pages
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Toshiba
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
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componentes Descripción
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Fabricante
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2004 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) ( Rev : 2003 )
Toshiba
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