DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A
• High Power Dissipation
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Power amplifier applications