50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET

DESCRIPTION
ThinkiSemi50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching mode power appliances.

FEATURES
* RDS(ON) = 23mΩ@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability

APPLICATION
   Auotmobile Convert System
   Networking DC-DC Power System
   Power Supply etc..