Description
This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.

General features
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED

APPLICATIONs
■ HIGH CURRENT,SWITCHING APPLICATION
■ AUTOMOTIVE