Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temp.
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to
   Increase Conversion Efficiency
• 100% UIS and Rg Tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability