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DMN1004UFDF Hoja de datos - Diodes Incorporated.

DMN1004UFDF image

Número de pieza
DMN1004UFDF

Other PDF
  2017  

PDF
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page
8 Pages

File Size
697.2 kB

Fabricante
Diodes
Diodes Incorporated. Diodes

Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.


FEATUREs
• 0.6mm Profile – Ideal for Low-Profile Applications
• PCB Footprint of 4mm2
• Low Gate Threshold Voltage
• Low On-Resistance
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change
   control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
   capable, and manufactured in IATF 16949 certified facilities),
   please refer to the related automotive grade (Q-suffix) part.
   A listing can be found at
   https://www.diodes.com/products/automotive/automotive-products/.
• This part is qualified to JEDEC standards (as references in
   AEC-Q) for High Reliability.
   https://www.diodes.com/quality/product-definitions/


APPLICATIONs
• General Purpose Interfacing Switch
• Power Management Functions


Número de pieza
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