Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

FEATUREs and Benefits
• DIOFET Utilizes a Unique Patented Process to Monolithically
   Integrate a MOSFET and a Schottky in a Single Die to Deliver:
   • Low RDS(ON) – Minimize Conduction Losses
   • Low VSD – Reducing the Losses due to Body Diode Conduction
   • Low Qrr – Lower Qrr of the Integrated Schottky Reduces Body
      Diode Switching Losses
   • Low Gate Capacitance (Qg/Qgs) Ratio – Reduces Risk of 
      Shoot-Through or Cross Conduction Currents at High Frequencies
   • Avalanche Rugged – IAR and EAR Rated
• Small Form Factor Thermally Efficient Package Enables Higher
   Density End Products
• Occupies just 33% of the Board Area Occupied by SO-8 Enabling
   Smaller End Product
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• DC-DC Converters
• Power Management Functions
• Analog Switch