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DS1258W(2002) Hoja de datos - Dallas Semiconductor -> Maxim Integrated

DS1258W image

Número de pieza
DS1258W

componentes Descripción

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9 Pages

File Size
161.5 kB

Fabricante
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas

DESCRIPTION
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.


FEATURES
◾ 10-Year Minimum Data Retention in the Absence of External Power
◾ Data is Automatically Protected During a Power Loss
◾ Separate Upper Byte and Lower Byte Chip Select Inputs
◾ Unlimited Write Cycles
◾ Low-Power CMOS
◾ Read and Write Access Times as Fast as 100ns
◾ Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
◾ Optional Industrial Temperature Range of -40°C to +85°C, Designated IND

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Número de pieza
componentes Descripción
PDF
Fabricante
3.3V 128k x 16 Nonvolatile SRAM
Ver
Maxim Integrated
128k x 16 Nonvolatile SRAM
Ver
Dallas Semiconductor -> Maxim Integrated
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Dallas Semiconductor -> Maxim Integrated

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