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DS_K6F8016U6C Hoja de datos - Samsung

DS_K6F8016U6C image

Número de pieza
DS_K6F8016U6C

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9 Pages

File Size
124.5 kB

Fabricante
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6F8016U6C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.


FEATURES
• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-FBGA-6.00x7.00

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Número de pieza
componentes Descripción
PDF
Fabricante
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Ver
Samsung
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Ver
Samsung
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
Unspecified
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Ver
FIDELIX

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