GENERAL DESCRIPTION
The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S2953MTS consists of sixteen CMOS 64M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.
The M366S2953MTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURE
• Performance range
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
   Latency (Access from column address)
   Burst length (1, 2, 4, 8 & Full page)
   Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
   system clock
• Serial presence detect with EEPROM
• PCB : Height (1,375mil), double sided component