MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

FEATUREs
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting
• [MOSFET]
   • Low ON-resistance 
   • 1.8V drive
• [SBD]
   • Small switching noise 
   • Low forward voltage (IF=2.0A, VF max=0.46V)
   • Halogen free compliance