EPA1200A Hoja de datos - Excelics Semiconductor, Inc.
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EPA1200A
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Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
• +39.5dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE
• Si3N4PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 300mA PER BIN RANGE
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