Número de pieza
ESD0P2RF-02LRH
Fabricante
Infineon Technologies
Bi-directional Ultra Low Capacitance TVS Diode
• ESD / transient protection of RF signal
lines according to:
IEC61000-4-2 (ESD): ±20kV (contact)
IEC61000-4-4 (EFT): 40 A (5 / 50 ns)
IEC61000-4-5 (Surge): 3 A (8 / 20 µs)
• Extremely small form factor down to
0.62 x 0.32 x 0.31 mm³
• Very low dynamic resistance
• Max. working voltage: ±5.3 V
• Extremely low capacitance: 0.2 pF typ.
• Very low reverse current < 1 nA typ.
• Very low series inductance down to 0.2 nH typ.
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
APPLICATIONs
• ESD protection of sensitive RF signal lines
• RF antenna protection, frontend module
• GPS, mobile TV, FM radio, RKE, UWB
Número de pieza
componentes Descripción
PDF
Fabricante
Ultra Low Capacitance Bi-Directional TVS Diode
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array ( Rev : 2018 )
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd
Ultra Low Capacitance Bi-Directional TVS Diode Array
Shanghai Leiditech Electronic Technology Co., Ltd