■ Description
The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

■ Features
• RDS(ON) = 1.5Ω@VGS = 10 V
• Low gate charge ( typical 20nC)
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability