GENERAL DESCRIPTION
The F25L04UA is a 4Megabit, 3V only CMOS Serial Flash memory device. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles.
The F25L04UA features a sector erase architecture. The device memory array is divided into one 8K bytes, two 4K bytes, one 16K bytes, one 32K bytes, and seven 64K bytes. Sectors can be erased individually without affecting the data in other sectors. Whole chip erase capabilities provide the flexibility to revise the data in the device.
The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory.

FEATURES
• Single supply voltage 2.7~3.6V
• Speed
   - Read max frequency : 33MHz
   - Fast Read max frequency : 50MHz; 75MHz; 100MHz
• Low power consumption
   - Active current :40mA
   - Standby current : 25μ A
• Reliability
   - 100,000 program/erase cycles typically
   - 10 years Data Retention
• Program
   - Byte program time 8 μ s(typical)
• Erase
   - Chip erase time 11s(typical)
   - Sector erase time 0.7s(typical)
• Auto Address Increment (AAI) Programming
   - Decrease total chip programming time over
   Byte-Program operations
• SPI Serial Interface
   - SPI Compatible : Mode 0 and Mode3
• End of program or erase detection
• Write Protect ( WP )
• Hold Pin ( HOLD )
• Package avalible
   - 8-pin SOIC 150-mil