GENERAL DESCRIPTION
The F25L08PA is a 8Megabit, 3V only CMOS Serial Flash memory device. The device supports the standard Serial Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory devices reliably store memory data even after 100,000 programming and erase cycles.
The memory array can be organized into 4,096 programmable pages of 256 byte each. 1 to 256 byte can be programmed at a time with the Page Program instruction. The device also can be programmed to decrease total chip programming time with Auto Address Increment (AAI) programming.

FEATURES
• Single supply voltage 2.7~3.6V
• Standard, Dual SPI
• Speed
   - Read max frequency: 33MHz
   - Fast Read max frequency: 50MHz; 100MHz
   - Fast Read Dual max frequency: 50MHz / 100MHz
   (100MHz / 200MHz equivalent Dual SPI)
• Low power consumption
   - Active current: 35 mA
   - Standby current: 30μ A
• Reliability
   - 100,000 typical program/erase cycles
   - 20 years Data Retention
• Program
   - Byte programming time: 7 μ s (typical)
   - Page programming time: 1.5 ms (typical)
• Erase
   - Chip erase time 10 sec (typical)
   - Block erase time 1 sec (typical)
   - Sector erase time 90 ms (typical)
• Page Programming
   - 256 byte per programmable page
• Auto Address Increment (AAI) WORD Programming
   - Decrease total chip programming time over
   Byte Program operations
• Lockable 4K bytes OTP security sector
• SPI Serial Interface
   - SPI Compatible: Mode 0 and Mode 3
• End of program or erase detection
• Write Protect ( WP )
• Hold Pin ( HOLD )
• All Pb-free products are RoHS-Compliant