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F25S04PA-50DG Hoja de datos - [Elite Semiconductor Memory Technology Inc.

F25S04PA image

Número de pieza
F25S04PA-50DG

Other PDF
  no available.

PDF
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page
34 Pages

File Size
378.3 kB

Fabricante
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT

GENERAL DESCRIPTION
The F25S04PA is a 4Megabit, 2.5V only CMOS Serial Flash memory device. The device supports the standard Serial Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory devices reliably store memory data even after 100,000 programming and erase cycles.
The memory array can be organized into 2,048 programmable pages of 256 byte each. 1 to 256 byte can be programmed at a time with the Page Program instruction.


FEATURES
• Single supply voltage 2.3~3.3V
• Standard, Dual SPI
• Speed
   - Read max frequency: 33MHz
   - Fast Read max frequency: 50MHz; 86MHz; 100MHz
   - Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz
      (100MHz / 172MHz/ 200MHz equivalent Dual SPI)
• Low power consumption
   - Active current: 25 mA
   - Standby current: 5μ A
   - Deep Power Down current: 3 μ A
• Reliability
   - 100,000 typical program/erase cycles
   - 20 years Data Retention
• Program
   - Byte programming time: 7 μ s (typical)
   - Page programming time: 0.8 ms (typical)
• Erase
   - Chip erase time 3 sec (typical)
   - Block erase time 0.4 sec (typical)
   - Sector erase time 40 ms (typical)
• Page Programming
   - 256 byte per programmable page
• SPI Serial Interface
   - SPI Compatible: Mode 0 and Mode 3
• End of program or erase detection
• Write Protect ( WP )
• Hold Pin ( HOLD )
• All Pb-free products are RoHS-Compliant


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