GENERAL DESCRIPTION
The F49L800UA/F49L800BA is a 8 Megabit, 3V only CMOS Flash memory device organized as 1M bytes of 8 bits or 512K words of 16bits. This device is packaged in standard 48-pin TSOP. It is designed to be programmed and erased both in system and can in standard EPROM programmers.

FEATURES
• Single supply voltage 2.7V-3.6V
• Fast access time: 70/90 ns
• 1,048,576x8 / 524,288x16 switchable by BYTE pin
• Compatible with JEDEC standard
   - Pin-out, packages and software commands
      compatible with single-power supply Flash
• Low power consumption
   - 7mA typical active current
   - 25uA typical standby current
• 100,000 program/erase cycles typically
• 20 years data retention
• Command register architecture
   - Byte programming (9us typical)
   - Sector Erase(sector structure: one 16 KB, two 8 KB,
      one 32 KB, and fifteen 64 KB)
• Auto Erase (chip & sector) and Auto Program
   - Any combination of sectors can be erased
      concurrently; Chip erase also provided.
   - Automatically program and verify data at specified
      address
• Erase Suspend/Erase Resume
   - Suspend or Resume erasing sectors to allow the
   read/program in another sector
• Ready/Busy (RY/ BY )
   - RY/BY output pin for detection of program or erase
      operation completion
• End of program or erase detection
   - Data polling
   - Toggle bits
• Hardware reset
   - Hardware pin(RESET ) resets the internal state machine
      to the read mode
• Sector Protection /Unprotection
   - Hardware Protect/Unprotect any combination of sectors
      from a program or erase operation.
• Low VCC Write inhibit is equal to or less than 2.0V
• Boot Sector Architecture
   - U = Upper Boot Block
   - B = Bottom Boot Block
• Packages available:
   - 48-pin TSOPI
   - All Pb-free products are RoHS-Compliant