GENERAL DESCRIPTION
The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications.
NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.
FEATURES
◾ Density
– 8 Gb (4 Gb x 2)
◾ Voltage Supply: 1.8V (1.7 V ~ 1.95V)
◾ Open NAND Flash Interface (ONFI) 1.0-compliant
◾ Single-level cell (SLC) technology
◾ Organization
– Page size: 4352 bytes (4096 + 256 bytes)
– Block size: 64 pages
– Number of planes: 1
◾ Asynchronous I/O performance
– tRC/ tWC: 30ns
◾ Array performance
– Read page: 115μs (MAX) with on-die ECC enabled
– Read page: 30μs (MAX) with on-die ECC disabled
– Program page: 200μs (TYP) with on-die ECC
disabled
– Program page: 240μs (TYP) with on-die ECC
enabled
– Erase block: 2ms (TYP)
◾ Command set: ONFI NAND Flash Protocol
◾ Advanced command set
– Program page cache mode
– Read page cache mode
– Permanent block locking (blocks 47:0)
– One-time programmable (OTP) mode
– Block lock
– Programmable drive strength
– Read unique ID
– Internal data move
◾ Operation status byte provides software method for
detecting
– Operation completion
– Pass/ fail condition
– Write-protect status
◾ Ready/ Busy# (R/B#) provides a hardware method of
detecting operation completion
◾ WP# signal: Write protect entire device
◾ ECC: 8-bit internal ECC is disabled at default (it can be
toggled using the SET FEATURE command)
◾ Block0 is valid when shipped from factory with ECC; for
minimum required ECC, see Error Management.
◾ RESET (FFh) required as first command after power-on
◾ Alternate method of automatic device initialization after
power-up (contact factory)
◾ Internal data move operations supported within the
plane from which data is read
◾ Quality and reliability
– Endurance: 100,000 PROGRAM/ERASE cycles
– Data retention: JESD47G-compliant
– Additional: Uncycled data retention: 10 years 24/7
@ 70°C