Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

FEATUREs
● Fast Switching
● Low ON Resistance(Rdson≤1.3Ω)
● Low Gate Charge(Typical Data:24nC)
● Low Reverse Transfer Capacitances(Typical:5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test

APPLICATIONs
● Used in Various Power Switching Circuit for System
   Miniaturization and Higher Efficiency.
● Power Switch Circuit of Adaptor and Charger.