Número de pieza
FCPF190N60-F152
Fabricante
![ONSEMI](/logo/ONSEMI.png)
ON Semiconductor
![ONSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system minia-turization and higher efficiency.
FEATUREs
• 650 V @TJ = 150°C
• Max. RDS(on) = 199 mΩ
• Ultra low gate charge (typ. Qg = 57 nC)
• Low effective output capacitance (typ. Coss.eff = 160 pF)
• 100% avalanche tested
Aplications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Número de pieza
componentes Descripción
PDF
Fabricante
N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ
Fairchild Semiconductor
N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ ( Rev : 2013_03 )
Fairchild Semiconductor
MOSFET – N-Channel, SUPERFET II 600 V, 20.2 A, 199 mΩ
ON Semiconductor
N-Channel SupreMOS® MOSFET 600 V, 16 A, 199 mΩ
ON Semiconductor
N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ
Fairchild Semiconductor
MOSFET – N-Channel, SUPERFET II 600 V, 7.4 A, 600 mΩ
ON Semiconductor
N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 mΩ
Fairchild Semiconductor
N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 mΩ
Fairchild Semiconductor
N-Channel SuperFET® II MOSFET 600 V, 75 A, 43 mΩ
Fairchild Semiconductor
N-Channel SuperFET® II MOSFET 600 V, 28 A, 130 mΩ
Fairchild Semiconductor