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FD30H100STS Hoja de datos - STMicroelectronics

FERD30H100S image

Número de pieza
FD30H100STS

componentes Descripción

Other PDF
  2016  

PDF
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page
13 Pages

File Size
477.4 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.


FEATUREs
• ST advanced rectifier process
• Stable leakage current over reverse voltage
• Reduced leakage current
• Low forward voltage drop
• High frequency operation
• ECOPACK®2 compliant component


Número de pieza
componentes Descripción
PDF
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