Número de pieza
FDA20N50_F109
Fabricante
![Fairchild](/logo/Fairchild.png)
Fairchild Semiconductor
![Fairchild](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
FEATUREs
• 22A, 500V, RDS(on) = 0.23Ω @VGS = 10 V
• Low gate charge ( typical 45.6 nC)
• Low Crss ( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Número de pieza
componentes Descripción
PDF
Fabricante
N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A, 260 mΩ
Fairchild Semiconductor
N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 mΩ
ON Semiconductor
N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 3.9 A, 2.0
Fairchild Semiconductor
N-Channel UniFETTM MOSFET 200 V, 39 A, 66㏁
Fairchild Semiconductor
N-Channel UniFETTM MOSFET 400 V, 26 A, 160 mΩ
ON Semiconductor
N-Channel UniFETTM II MOSFET™ 600 V, 12 A, 650 Ω
Fairchild Semiconductor
16 A, 500 V N-CHANNEL POWER MOSFET
Unisonic Technologies
VX-2 Series Power MOSFET N-Channel Enhancement type(500 V 20 A )
Shindengen
N-Channel UniFET™ FRFET® MOSFET 500 V, 20 A, 260 mΩ
Fairchild Semiconductor
MOSFET – N-Channel,UniFET 500 V, 48 A, 105 ㏁
ON Semiconductor