Número de pieza
FDB110N15A
Fabricante
![ONSEMI](/logo/ONSEMI.png)
ON Semiconductor
![ONSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FEATUREs
• RDS(on) = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
APPLICATIONs
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
Número de pieza
componentes Descripción
PDF
Fabricante
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