General Description
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FEATUREs
• 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
• Critical DC electrical parameters specified at elevated temperature
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
• High performance trench technology for extremely low RDS(ON)
• 175°C maximum junction temperature rating