General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• –5.5 A, –12 V RDS(ON) = 0.033 Ω @ VGS = –4.5 V RDS(ON) = 0.052 Ω @ VGS = –2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON) .

APPLICATIONs
• Battery management
• Load switch
• Battery protection