General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• –5.8 A, –20 V.  RDS(ON)= 30 mΩ@ VGS= –4.5 V
                       RDS(ON)= 43 mΩ@ VGS= –2.5 V
• Low Gate Charge
• High performance trench technology for extremely
    low RDS(ON)
• SuperSOT^TM –6 package: small footprint (72% smaller than standard SO–8)low profile (1mm thick).