General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• –4.5 A, –20 V RDS(ON)= 0.053 Ω@ VGS= –4.5 V
                    RDS(ON)= 0.080 Ω@ VGS= –2.5 V
• Rugged gate rating (±12V)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)