General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

FEATUREs
◾ Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
◾ Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
◾ 100% UIL tested
◾ RoHS Compliant

APPLICATIONs
◾ Primary Switch in isolated DC-DC
◾ Synchronous Rectifier
◾ Load Switch