General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal perfo rmance for its physical size and is well suited to linear mode applications.

FEATUREs
MOSFET:
■ -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V RDS(ON) = 160 mΩ @ VGS = -2.5 V RDS(ON) = 240 mΩ @ VGS = -1.8 V
■ Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm

Schottky:
■ VF < 0.46 V @ 500 mA