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FDFS6N548 image

Número de pieza
FDFS6N548

Other PDF
  no available.

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page
7 Pages

File Size
404.4 kB

Fabricante
Fairchild
Fairchild Semiconductor Fairchild

General Description
The FDFS6N548 combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.


FEATUREs
■ Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A
■ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A
■ VF < 0.45V @ 2A
   VF < 0.28V @ 100mA
■ Schottky and MOSFET incorporated into single power surface
   mount SO-8 package
■ Electrically independent Schottky and MOSFET pinout for
   design flexibility
■ Low Miller Charge


APPLICATION
■ DC/DC Conversion


Número de pieza
componentes Descripción
PDF
Fabricante
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 4A, 56mΩ
Ver
Fairchild Semiconductor
Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode
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ON Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2006 )
Ver
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Ver
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Ver
ON Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Ver
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2006 )
Ver
Fairchild Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Ver
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ
Ver
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ
Ver
Fairchild Semiconductor

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