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FDMB2308PZ Hoja de datos - Fairchild Semiconductor

FDMB2308PZ image

Número de pieza
FDMB2308PZ

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page
7 Pages

File Size
313 kB

Fabricante
Fairchild
Fairchild Semiconductor Fairchild

General Description
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).


FEATUREs
■ Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
■ Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
■ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
■ HBM ESD protection level 2.8 kV (Note 3)
■ RoHS Compliant


APPLICATION
■ Li-Ion Battery Pack

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