General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FEATUREs
■ Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
■ Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
■ Advanced Package and Silicon combination for low rDS(on) and high efficiency
■ MSL1 robust package design
■ 100% UIL tested
■ RoHS Compliant

APPLICATIONs
■ Primary DC-DC MOSFET
■ Secondary Synchronous Rectifier
■ Load Switch