General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V
                 RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

APPLICATIONs
• Power management
• Load switch
• Battery protection