Fabricante
![Fairchild](/logo/Fairchild.png)
Fairchild Semiconductor
![Fairchild](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
FEATUREs
• RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A
• Low Gate Charge ( Typ. 10nC)
• Low Crss ( Typ. 5pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Número de pieza
componentes Descripción
PDF
Fabricante
N-channel MOSFET BVDSS: 600V ID: 4.5A RDS(ON): 2.3ohm
Unspecified
4.5A 500V N CHANNEL POWER MOSFET
First Components International
N-Channel Power MOSFET (4.5A, 500Volts)
Nell Semiconductor Co., Ltd
4.5A 500V N CHANNEL POWER MOSFET
First Components International
HEXFET© Power MOSFET
International Rectifier
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
Unisonic Technologies
N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω ( Rev : 2007 )
Fairchild Semiconductor
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
Unisonic Technologies
N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω
Fairchild Semiconductor
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET ( Rev : 2014 )
Unisonic Technologies