General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
■ 52 A, 30 V. RDS(ON) = 0.0135 W @ VGS=10 V
                   RDS(ON) = 0.020 W @ VGS=4.5 V.
■ Improved replacement for NDP6030L/NDB6030L.
■ Low gate charge (typical 34 nC).
■ Low Crss (typical 175 pF).
■ Fast switching speed.