General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

FEATUREs
◾ Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
◾ Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
◾ Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
◾ Low gate resistance
◾ RoHS compliant

APPLICATION
◾ DC-DC for Desktop Computers and Servers
◾ VRM for Intermediate Bus Architecture