General Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

FEATUREs
• 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• Load switch
• Battery protection
• Power management