Description
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size and cost.

FEATUREs
• Max Junction Temperature 175°C
• Avalanche Rated 361 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery

APPLICATIONs
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits

Die Information
• Wafer Diameter: 6 inch
• Die Size: 3,700 × 3,700 m (include Scribe Lane)
• Metallization:
   ♦ Top Ti/TiN/AlCu 4 m
   ♦ Back Ti/NiV/Ag
• Die Thickness: Typ. 200 m
• Bonding Pad Size
   ♦ Anode 3,120 × 3,120 m
• Recommended Wire Bond (Note 1)
   ♦ Anode: 20 mil × 3