General Description
FIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

FEATUREs
• 7A,600V,RDS(on)（typ） = 1.0 Ω@VGS=10V
• Low gate charge
• Low Crss
• Fast switching
• Improved dv/dt capability
• FIR7N60FG
• Advanced N-Ch Power MOSFET-I
• General Description