Description
The FM20L08 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and unlimited write endurance make FRAM superior to other types of memory.

FEATUREs
1Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx8
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process

SRAM Replacement
• JEDEC 128Kx8 SRAM pinout
• 60 ns Access Time, 350 ns Cycle Time

System Supervisor
• Low Voltage monitor drives external /LVL signal
• Write protects memory for low voltage condition
• Software programmable block write protect
   (-TG1 only)

Superior to Battery-backed SRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots

Low Power Operation
• 3.3V +10%, -5% Power Supply
• 22 mA Active Current

Industry Standard Configurations
• Industrial Temperature -40° C to +85° C
• 32-pin “Green”/RoHS TSOP (-TG)